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| SHINDENGEN Varistor SMD VR61F1 OUTLINE DIMENSIONS Case : 1F (Unit : mm) RATINGS Absolute Maximum Ratings Item Storage Temperature Junction Temperature Average Rectified Forward Current Symbol Tstg Tj IO Conditions Ta = 25, Sine wave, R-load, Commercial frequency, On alumina substrate Ta = 25, Sine wave, R-load, Commercial frequency, On glass-epoxy substrate 50Hz, Sine wave, Non-repetitive 10/200s, Non-repetitive 10/1000s, Non-repetitive Ratings -55150 150 0.37 0.28 7.5 60 30 Unit Arms Arms A A Peak Surge Forward Current IFSM Electrical Characteristics (Tl=25) Item Symbol IF = 1mA Forward Voltage Junction Capacitance Conditions IF = 10mA IF = 70mA f = 100kHz, VD = 1V, OSC = 50mA Junction to ambient, On alumina substrate VF Cj ja Ratings Unit 2.052.55 2.503.00 V 2.853.35 TYP 15 pF MAX 108 /W MAX 157 Thermal Resistance Junction to ambient, On glass-epoxy substrate Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd VR-61F1 1000 Forward Voltage 100 Forward Current IF [mA] Tl=150C [TYP] Tl=25C [TYP] 10 1 Pulse measurement 0.1 0 1 2 3 4 5 Forward Voltage VF [V] VR-61F1 Junction Capacitance TYP Tl = 25C DC = 1V 24 20 16 12 Junction Capacitance Cj [pF] 8 4 0 100 1000 10000 Frequency f [MHz] VR-61F1 16 Peak Surge Forward Capability IFSM 14 10ms 10ms 1 cycle Peak Surge Forward Current IFSM (rms) [A] 12 non-repetitive, sine wave, Tj=25C before surge current is applied 10 8 6 4 2 0 1 2 5 10 20 50 100 Number of Cycles [cycles] VR-61F1 1.8 Tj=150C Sine Wave 1.6 Forward Power Dissipation 1.4 1.2 Power Dissipation P [W] 1 0.8 0.6 0.4 0.2 0 0 0.1 0.2 0.3 0.4 0.5 Average Rectified Forward Current IO (rms) [A] VR-61F1 Average Rectified Forward Current IO (rms) [A] 0.5 Sine Wave R-load Free in air 0.4 Derating Curve Alumina substrate Soldering land 2mm Conductor layer 20m Substrate thickness 0.64mm Glass-epoxy substrate Soldering land 2mm Conductor layer 35m 0.3 Alumina substrate 0.2 0.1 Glass-epoxy substrate 0 0 50 100 150 Ambient Temperature Ta [C] |
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